The Single Event Effects (SEE) Symposium is dedicated towards the understanding of radiation-induced SEEs in microelectronics and photonics. SEEs occur when a single particle (neutron, proton or other heavy ion) interacts with the atoms that makeup a semiconductor. Some examples of these types of events are Single Event Upsets (SEU), Single Event Latchup (SEL), Single Event Gate Rupture (SEGR), Single Event Burnout (SEB), & others.
We invite presentations addressing all aspects of SEE in microelectronics and photonic devices, circuits, and systems. Topics include (but are not limited to):

Upset, Transients, Latchup, Gate Rupture, Burnout, Destructive Effects in Bipolar Devices, Microdosimetric Effects, Dark Current.

Basic Mechanisms and Modeling:
Destructive and Non-Destructive Effects, Nanoscale Phenomena, Effect of Operating Speed, Charge Transport and Collection, Impact of Circuit and Environmental Parameters, including temperature and aging.

SEE Mitigation Methods Including Hardened by Design (HBD) and by Process:
Approaches for gaining SEE hardness in commercial devices.

Environments and Facilities:
Space, Atmospheric and Terrestrial environments. Heavy Ion, Proton, Neutron and Laser Test Facilities.

Operational Regimes and Performance Data:
Systems and Devices at LEO to Geosynchronous and Beyond, High Altitude Aircraft, and Terrestrial.

Electronic & Photonic Device Data:
Memories, Latches, Analog Circuits, Microprocessors, FPGAs, Optocouplers, DC to DC Converters, Sensors, Commercial and Hardened Components, Data Capture Methods, and Data Analysis.

Error Mitigation, Error Detection & Correction, Multi-core Processing, and Fault Tolerant Systems.

Event Rate Computation:
Analytic, Monte Carlo, Mixed-Level (Radiation Transport + SPICE, TCAD + SPICE, etc.)

Special consideration will be given to complex device testing and effect analysis.

Penny Meeker,

California - USA La Jolla - San Diego

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